- Clean the wafer with acetone, isopropanol, DI H20, and blow dry with filtered N2
- Center the wafer on the chuck of the spin coater
- Apply enough Shipley S1813 photoresist to cover the wafer completely, with special care not to have any bubbles in the resist.
- Spin the wafer for 30 seconds at 3000RPM (acceleration at 300RPM/sec).
- Bake the wafer for 10 minutes at 100°C (or 2 minutes at 130°C) on a hotplate.
- Align wafer on mask aligner, and expose to UV light for 8-10 seconds (at an exposure energy of 25-30 mJ/cm2).
- Note: S1813, as a positive photoresist, is less sensitive to exposure dose than negative photoresists. As long as the baking is sufficient to cure the photoresist, the exposure dose simply needs to be above a minimum threshold to ensure accurate reproduction of features.
- Develop in a bath of MF319 developer for 30-60 seconds
- Rinse with DI H2O to remove excess MF319 and blow dry with filtered N\textsubscript{2}.
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